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Chemical band approach to the structures of chalcogenide glasses with reversible switching propertiesBICERANO, J; OVSHINSKY, S. R.Journal of non-crystalline solids. 1985, Vol 74, Num 1, pp 75-84, issn 0022-3093Article

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Langevin micromagnetics of recording media using subgrain discretizationSCHREFL, Thomas; SCHOLZ, Werner; SÜSS, Dieter et al.IEEE transactions on magnetics. 2000, Vol 36, Num 5, pp 3189-3191, issn 0018-9464, 1Conference Paper

Clock-frequency and temperature margins of a high-temperature superconductor delay-line memoryHATTORI, W; TAHARA, S.Superconductor science & technology (Print). 1999, Vol 12, Num 11, pp 915-917, issn 0953-2048Conference Paper

Current-controlled negative-resistance behaviour and memory switching in bulk As-Te-Se glassesCHATTERJEE, R; ASOKAN, S; TITUS, S. S. K et al.Journal of physics. D, Applied physics (Print). 1994, Vol 27, Num 12, pp 2624-2627, issn 0022-3727Article

Memory switching in thermally grown titanium oxide filmsANSARI, A. A.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 5, pp 911-917, issn 0022-3727Article

Memory-switching effect in single crystals of thallium selenideHUSSEIN, S. A.Crystal research and technology (1979). 1989, Vol 24, Num 4, pp 467-474, issn 0232-1300Article